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Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden
Kagaku Kogyo, 54(9), p.687 - 692, 2003/09
Real-time in-situ photoemission spectroscopic studies on Ti(0001) oxidation by O
molecules at 473K-673K are reviewed. The Ti(0001) surface was changed from metal to oxide during exposure to oxygen gas. From the time dependent Ti-2p photoemission spectra, time evolution of each oxide component of Ti was clarified.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Hyomen Kagaku, 24(8), p.500 - 508, 2003/08
Temperature dependence of the initial oxidation kinetics of Ti(0001) surface was investigated by low energy electron diffraction (LEED) and real-time photoelectron spectroscopy. The LEED observation revealed that the oxide layers grew epitaxially. From the oxygen uptake curve, it was clarified that oxigen diffusion was significantly enhanced by surface temperature and the oxide layers thickness reached to 7 nm at 400
C. From Ti-2p photoelectron spectroscopy, TiO was predominant at the subsurface while TiO and TiO
components were also observed at the interface.
Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(6B), p.3976 - 3982, 2003/06
Times Cited Count：6 Percentile：28.14(Physics, Applied)It is well known that the thermal oxidation on Si(001) surface is an important reaction system to form of the gate-oxide films in MOSFET, since it is necessary to control the film thickness under a few nano-meter scale. Thus, we have studied the oxygen uptake and the Si oxidation states depending on the oxidation times by using the synchrotron radiation photoemission spectroscopy in 1
10
Pa of O at the surface temperature from 870K to 1120K. We clarified the oxidation depending on the surface temperature was explained by the kinetics (Langumuir and auto-catalytic model). Using real time photoemission spectroscopy, we found that the Si
sepcies was not formed at the initial oxidation stage.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Nuclear Instruments and Methods in Physics Research B, 200, p.376 - 381, 2003/01
Times Cited Count：10 Percentile：56.35(Instruments & Instrumentation)no abstracts in English
Pu, 
Pu, 
Pu, 
Pu and 
Pu irradiated by neutrons and protons at the energies up to 250 MeVKonobeyev, A. Y.; Fukahori, Tokio; Iwamoto, Osamu
JAERI-Research 2002-029, 48 Pages, 2002/12
JAERI-Research-2002-029.pdf:1.53MB
The evaluation of nuclear data for plutonium isotopes with atomic mass number from 238 to 242 has been performed. Neutron data were obtained at the energies from 20 to 250 MeV and combined with JENDL-3.3 data at 20 MeV. Evaluation of the proton data has been done from 1 to 250 MeV. The coupled channel optical model was used to obtain angular distributions for elastic and inelastic scattering and transmission coefficients. Pre-equilibrium exciton model and Hauser-Feshbach statistical model were used to describe neutron and charged particles emission from the excited nuclei. These evaluation is the first work for producing the full set of evaluated file up to 250 MeV for plutonium isotopes.
reaction dynamics with Si(001) surfaces as observed by synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Yoshigoe, Akitaka
Atomic Collision Research in Japan, No.28, p.97 - 99, 2002/00
The translational kinetic energy of incident molecules is an important factor for the induction of surface reactions. We applied supersonic seed molecular beam techniques and high-energy-resolution photoemission spectroscopy using synchrotron radiation to the Si initial oxidation analysis. We have already found out that the saturated oxygen coverage on H
O-chemisorbed Si(001) surfaces depends on the O incident energy. Two potential energy barriers were confirmed in accordance with the first-principles calculation. An action of the incident energy should be confirmed also on clean Si(001) surfaces. Therefore, the incident energy dependence of the O dissociative chemisorption on the clean Si(001) surface has been investigated by photoemission spectroscopy for Si-2p and O-1s core levels to make clear how the incident energy affects the ultra-thin oxide-layers formation.
analysis using high resolution synchrotron radiation photoemission spectroscopy for initial oxidation of HO pre-adsorbed Si(001) surfaces induced by supersonic O molecular beams at room temperatureYoshigoe, Akitaka; Teraoka, Yuden
Atomic Collision Research in Japan, No.28, p.105 - 107, 2002/00
The oxidation states up to Si states were formed when the translational kinetic energy of O was 3.0 eV. The time evolustions of each Si oxidation states were in situ measured by using the high resolution photoemission spectroscopy.The translational kinetic energy of 3.0eV randomly enhanced the oxidation on Si(001) surface up to the second layer Si backbonds. It was found that the Si was not observed, thus the dimer Si atoms at the top layer was not surrounded by four oxygen atoms at the initial oxidation stage.
observation of oxidation states on Si(001)-21 during supersonic O molecular beam irradiationYoshigoe, Akitaka; Teraoka, Yuden
Atomic Collision Research in Japan, No.27, p.80 - 82, 2001/00
no abstracts in English
